Monolithic 9 to 70 GHz distributed amplifier

Author

Camilleri, N. ; Chye, P. ; Lee, A. ; Gregory, P.

Author_Institution

Avantek Inc., Folsom, CA, USA

fYear

1990

fDate

7-8 May 1990

Firstpage

27

Lastpage

30

Abstract

Multioctave monolithic GaAs pseudomorphic high-electron-mobility transistor (HEMT) amplifiers have been developed to operate from 9 to 70 GHz. These amplifiers make use of state-of-the-art HEMT devices of less than 0.2 mu m. Typical performance for a distributed amplifier using a 75- mu m device is 4 dB of gain with 0.5-dB peak-to-peak ripple and a maximum noise figure of 7 dB across the 9 to 70-GHz band. Monolithic distributed amplifier design with capacitive gate coupling is described.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; linear integrated circuits; microwave amplifiers; wideband amplifiers; 0.3 micron; 4 dB; 7 dB; 9 to 70 GHz; EHF; GaAs; MM-wave operation; SHF; capacitive gate coupling; distributed amplifier; high-electron-mobility transistor; multioctave monolithic amplifier; pseudomorphic HEMT; Couplings; Distributed amplifiers; Gallium arsenide; Grounding; Lithography; Millimeter wave technology; Noise figure; PHEMTs; Performance gain; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110931

Filename

110931