Low-damage ECR-plasma-etching technique for SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) capacitor for FeRAM devices

Author

Maejima, Y. ; Saitoh, S. ; Hayashi, Y.

Author_Institution

Microelectronics Research Laboratories, NEC Corporation 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan

fYear

1997

fDate

10-12 June 1997

Firstpage

137

Lastpage

138

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623736

Filename

623736

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