Poly-Si TFT fabricated at 150/spl deg/C using ICP-CVD and excimer laser annealing for plastic substrates

Author

Min-Cheol Lee ; Sang-Myeon Han ; Su-Hyuk Kang ; Moon-Young Shin ; Min-Koo Han

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea

fYear

2003

fDate

8-10 Dec. 2003

Abstract

We have fabricated poly-Si TFTs employing ICP-CVD (inductively coupled plasma chemical vapor deposition) and ELA at a very low temperature of 150/spl deg/C. Poly-Si film with large grains exceeding 3000 /spl Aring/ and silicon dioxide film with the interface trap density in the order of 10/sup 11//cm/sup 2/ are deposited by ICP-CVD at 150/spl deg/C. A high mobility exceeding 100 cm/sup 2//Vs with a low sub-threshold swing of 0.7 V/dec was obtained without any post-annealing.

Keywords

carrier mobility; elemental semiconductors; interface states; laser beam annealing; plasma CVD; semiconductor device measurement; silicon; thin film transistors; 150 degC; 3000 /spl Aring/; ICP-CVD; Si-SiO/sub 2/; excimer laser annealing; fabrication temperature; high mobility; inductively coupled plasma chemical vapor deposition; interface trap density; low temperature ELA; plastic substrates; poly-Si TFT; silicon dioxide film; sub-threshold swing; Annealing; Chemical lasers; Chemical vapor deposition; Plasma chemistry; Plasma density; Plasma temperature; Plastics; Semiconductor films; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269248

Filename

1269248