DocumentCode
2589855
Title
Simulation of quantum electronic transport in small devices: a master equation approach
Author
Fischetti, M.V. ; Laux, S.E. ; Kumar, A.
Author_Institution
IBM Semicond. Res. & Dev. Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
We describe a formulation of quantum electron transport in small devices based on a master equation. We sketch its derivation from the Liouville-von Neumann equation, especially alluding to the subtle issues related to irreversibility. We also present results regarding ballistic and dissipative transport in double gate Si FETs.
Keywords
Liouville equation; MOSFET; ballistic transport; carrier mobility; master equation; quantum theory; semiconductor device models; Liouville-von Neumann equation; Si; ballistic transport; charge-carrier transport; dissipative transport; double gate Si FET; irreversibility; master equation; small device quantum electronic transport; Ballistic transport; Double-gate FETs; Electrons; Electrostatics; Equations; Particle scattering; Phonons; Potential well; Research and development; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269323
Filename
1269323
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