New non-volatile memory with extremely high density metal nano-dots

Author

Takata, M. ; Kondoh, S. ; Sakaguchi, T. ; Choi, H. ; Shim, J.-C. ; Kurino, H. ; Koyanagi, M.

Author_Institution

Dept. of Bioeng. & Robotics, Tohoku Univ., Sendai, Japan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

A new non-volatile memory with extremely high density metal nano-dots, MND (metal nano-dot) memory, was proposed and fundamental characteristics of the MND memory were evaluated. The MND film is used as a charge retention layer in the MND memory. The MND film consists of a thin oxide film that dispersively includes high density metal dots with nano-scale. The MND film is formed by using sputtering technique with a special sputtering target. The size and the density of the MND in the film are typically 2-3 nm and around 2/spl times/10/sup 13//cm/sup 2/, respectively, which were superior to that of Si quantum dot memory. Non-volatile memory operation at a relatively low voltage and good endurance characteristic were confirmed in the MND memory fabricated according to the conventional MOS process.

Keywords

MOS memory circuits; integrated circuit measurement; integrated circuit metallisation; nanoelectronics; nanostructured materials; quantum dots; sputter deposition; 2 to 3 nm; MND density; MND film charge retention layer; MND memory; MND size; MOS process; Si quantum dot memory; extremely high density metal nano-dots; memory endurance characteristic; nonvolatile memory; nonvolatile memory operation; sputtering target; sputtering technique; thin oxide film; Biomedical engineering; Electrons; Glass; Insulation; Nonvolatile memory; Quantum dots; Robots; Semiconductor films; Sputtering; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269343

Filename

1269343