Isolated acoustic wave based on AlN/ZnO/diamond structure for sensor applications

Author

Le Brizoual, L. ; Omar, Elmazria ; Sergei, Zghoon ; Akram, Soussou ; Frederic, Sarry ; Abdou, Djouadi Mohammed

Author_Institution

Inst. des Mater. Jean Rouxel (IMN), Univ. Nantes, Nantes, France

fYear

2009

fDate

20-24 April 2009

Firstpage

305

Lastpage

308

Abstract

We present a theoretical calculation and experimental results for an isolated acoustic wave. The experimental device is modeled by finite element method (FEM) for the structure AlN/ZnO/diamond. The phase velocity in the AlN/ZnO/diamond structure was investigated by theoretical calculations. It was found that the AlN thickness must be at least more than 3lambda/2 to obtain a negligible surface displacement. In the same way the ZnO thickness for a fixed value of AlN at 2lambda must be higher than lambda/4 to confine the acoustic wave. The coupling of the wave presents an optimum around lambda/2 for the ZnO layer thichness.

Keywords

II-VI semiconductors; III-V semiconductors; aluminium compounds; diamond; elemental semiconductors; finite element analysis; piezoelectric devices; sensors; wide band gap semiconductors; zinc compounds; AlN-ZnO-C; FEM; dielectric devices; finite element method; isolated acoustic wave sensor; phase velocity; piezoelectric boundary waves; piezoelectric devices; wave coupling; Acoustic devices; Acoustic materials; Acoustic propagation; Acoustic sensors; Acoustic waves; Finite element methods; Piezoelectric materials; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide; Finite element modeling; Isolated acoustic wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2009 Joint with the 22nd European Frequency and Time forum. IEEE International

Conference_Location

Besancon

ISSN

1075-6787

Print_ISBN

978-1-4244-3511-1

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2009.5168191

Filename

5168191