• DocumentCode
    2590951
  • Title

    Fully integrated 50 Gbit/s half-rate linear phase detector in SiGe BiCMOS

  • Author

    Joram, Niko ; Barghouthi, A. ; Knochenhauer, C. ; Ellinger, F. ; Scheytt, C.

  • Author_Institution
    Dresden University of Technology, Germany
  • fYear
    2011
  • fDate
    5-10 June 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given, as follows. Presented is a fully integrated half-rate linear phase detector for clock and data recovery (CDR) in serial communication systems which is capable of operating up to 50 Gbit/s. Because of its half-rate architecture, the phase detector features inherent 1:2 demultiplexing. At a core supply voltage of 3.3 V and a bias voltage of 3.6 V, the total power consumption of the integrated circuit amounts to 1.22 W. Using a 0.25 µm SiGe HBT BiCMOS process, the chip core area occupies 0.88mm2.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
  • Conference_Location
    Baltimore, MD
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-61284-754-2
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2011.5973130
  • Filename
    5973130