DocumentCode
2591029
Title
Narrow-channel-MOSFET having Si-dots for high-rate generation of random numbers
Author
Ohba, R. ; Yasuda, S. ; Tanamoto, T. ; Uchida, K. ; Fujita, S.
Author_Institution
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fYear
2003
fDate
8-10 Dec. 2003
Abstract
We propose a new noise source device utilizing a narrow-channel-MOSFET having Si multi-dots to realize the high-speed random number generation that is required for network security. We generate high-quality random numbers at a generation rate of 25 kbits/s using the Si dot MOSFET. We also present a guideline for designing Si dot MOSFETs for increased generation rate.
Keywords
MOSFET; elemental semiconductors; noise generators; random number generation; semiconductor quantum dots; silicon; 25 kbit/s; RNG; Si; Si dot MOSFET; Si multi-dots; high-rate random number generation; narrow-channel-MOSFET; network security; noise source device; random number generator; Electrons; FETs; Fluctuations; Guidelines; Large scale integration; MOSFET circuits; Noise generators; Power MOSFET; Power generation; Random number generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269388
Filename
1269388
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