DocumentCode
2591152
Title
Use of process simulators to assist in the design of processes for manufacturability
Author
Kump, Michael R. ; Mylroie, S.W. ; Alexander, W.J.C. ; Walton, A.J.
Author_Institution
Technol. Modeling Associates, Palo Alto, CA, USA
fYear
1990
fDate
11-12 Sep 1990
Firstpage
15
Lastpage
21
Abstract
It is shown how semiconductor process simulation. by replacing numerous runsplits, can be a cost-effective way to design technologies for both optimal performance and manufacturability. The use of process and device simulators for designing for manufacturability is illustrated by considering two examples both drawn from experiences in semiconductor manufacturing. The first is the design of a high-sheet-resistivity implanted resistor to minimize its variability. The second is the design of certain aspects of a lightly doped drain (LDD) MOS process both to optimize the intrinsic device performance and to improve its manufacturability
Keywords
digital simulation; electronic engineering computing; integrated circuit manufacture; semiconductor device manufacture; LDD MOS process; high-sheet-resistivity; implanted resistor; lightly doped drain; manufacturability; semiconductor manufacturing; semiconductor process simulation; Conductivity; Costs; Design for manufacture; Energy consumption; Manufacturing processes; Process design; Random processes; Resistors; Semiconductor device manufacture; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990
Conference_Location
Danvers, MA
Type
conf
DOI
10.1109/ASMC.1990.111214
Filename
111214
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