• DocumentCode
    2591152
  • Title

    Use of process simulators to assist in the design of processes for manufacturability

  • Author

    Kump, Michael R. ; Mylroie, S.W. ; Alexander, W.J.C. ; Walton, A.J.

  • Author_Institution
    Technol. Modeling Associates, Palo Alto, CA, USA
  • fYear
    1990
  • fDate
    11-12 Sep 1990
  • Firstpage
    15
  • Lastpage
    21
  • Abstract
    It is shown how semiconductor process simulation. by replacing numerous runsplits, can be a cost-effective way to design technologies for both optimal performance and manufacturability. The use of process and device simulators for designing for manufacturability is illustrated by considering two examples both drawn from experiences in semiconductor manufacturing. The first is the design of a high-sheet-resistivity implanted resistor to minimize its variability. The second is the design of certain aspects of a lightly doped drain (LDD) MOS process both to optimize the intrinsic device performance and to improve its manufacturability
  • Keywords
    digital simulation; electronic engineering computing; integrated circuit manufacture; semiconductor device manufacture; LDD MOS process; high-sheet-resistivity; implanted resistor; lightly doped drain; manufacturability; semiconductor manufacturing; semiconductor process simulation; Conductivity; Costs; Design for manufacture; Energy consumption; Manufacturing processes; Process design; Random processes; Resistors; Semiconductor device manufacture; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990
  • Conference_Location
    Danvers, MA
  • Type

    conf

  • DOI
    10.1109/ASMC.1990.111214
  • Filename
    111214