High frequency micromechanical piezo-on-silicon block resonators

Author

Humad, S. ; Abdolvand, R. ; Ho, G.K. ; Piazza, G. ; Ayazi, F.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

This paper reports on the design, implementation and characterization of high-frequency single crystal silicon (SCS) block resonators with piezoelectric electromechanical transducers. The resonators are fabricated on 4/spl mu/m thick SOI substrates and use sputtered ZnO as the piezo material. The centrally-supported blocks can operate in their first and higher order length extensional bulk modes with high quality factor (Q). The highest measured frequency is currently at 210 MHz with a Q of 4100 under vacuum, and the highest Q measured is 11,600 at 17 MHz. The uncompensated temperature coefficient of frequency (TCF) was measured to be -40ppm//spl deg/C and linear over the temperature range of 20-100/spl deg/C.

Keywords

Q-factor; crystal resonators; equivalent circuits; etching; finite element analysis; micromachining; micromechanical resonators; modal analysis; silicon-on-insulator; zinc compounds; 20 to 100 C; 210 MHz; SOI substrates; Si; ZnO; design; equivalent electrical model; etching; finite element modal analysis; high-frequency resonators; implementation; micromechanical piezo-on-silicon resonators; out-of-plane flexural modes; piezoelectric transducers; single crystal silicon block resonators; temperature coefficient of frequency; Crystalline materials; Current measurement; Frequency measurement; Micromechanical devices; Piezoelectric transducers; Q factor; Q measurement; Silicon; Temperature distribution; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269437

Filename

1269437