DocumentCode
2592768
Title
Source-drain breakdown in thin SOI transistors
Author
McKitterick, J.B.
Author_Institution
Allied-Signal Aerosp. Technol. Center, Columbia, MD, USA
fYear
1989
fDate
3-5 Oct 1989
Firstpage
17
Lastpage
18
Abstract
Summary form only given. The problem of premature source-drain breakdown in thin SOI FETs is studied, both numerically with PISCES and analytically, with the gate voltages set so that the device is off. The analysis indicates that an LDD structure is required in order to improve the source-drain breakdown in thin SOI FETs. The LDD is needed even at comparatively long gate lengths, especially as the quality of the LDD will be even greater
Keywords
electric breakdown of solids; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; LDD structure; PISCES; SOI FETs; gate lengths; gate voltages; numerical study; premature source-drain breakdown; thin SOI transistors; Bipolar transistors; Breakdown voltage; Charge carrier processes; Doping; Electric breakdown; FETs; Feedback; Impact ionization; Semiconductor films; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location
Stateline, NV
Type
conf
DOI
10.1109/SOI.1989.69744
Filename
69744
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