Investigation of high-speed modulaiton of 1.3μm InAs/InGaAs quantum dot VCSELs

Author

Tong, C.Z. ; Xu, D.W. ; Yoon, S.F. ; Ding, Y. ; Fan, W.J.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

18-20 Oct. 2009

Firstpage

906

Lastpage

908

Abstract

The influence of quantum dot (QD) density, uniformity and layer number on the 3 dB bandwidth of 1.3 mum InAs-InGaAs QD VCSELs is investigated by the small signal analysis of all-pathway rate equations. The dependence of bandwidth on the QD density is shown. Linearly dependence of bandwidth on the QD uniformity is demonstrated. High speed operation (> 10 GHz) of QD VCSEL emitting at 1.3 mum is predicated.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; quantum dot lasers; surface emitting lasers; InAs-InGaAs; all-pathway rate equations; high-speed modulation; quantum dot VCSEL; quantum dot density; small signal analysis; vertical-cavity surface-emitting laser; wavelength 1.3 mum; Bandwidth; Distributed Bragg reflectors; Equations; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Quantum dots; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Broadband Network & Multimedia Technology, 2009. IC-BNMT '09. 2nd IEEE International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-4590-5

Electronic_ISBN

978-1-4244-4591-2

Type

conf

DOI

10.1109/ICBNMT.2009.5347816

Filename

5347816