Photoconductor diamond film detector

Author

Jesen, S. ; Thaiyotin, L. ; Cheirsirikul, S. ; Phetchakul, T.

Author_Institution

Electron. Res. Center, King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok

Volume

2

fYear

2008

fDate

14-17 May 2008

Firstpage

801

Lastpage

804

Abstract

Diamond film was synthesized on a silicon substrate by MPCVD (microwave plasma chemical vapor deposition) process and used to fabricate a photoconductor for the detection of UV light. The photoconductor was fabricated on free standing diamond film and operation in a planar. This paper presents the spectral response of photoconductor, concentration of boron doping, times and temperature. The device shows good response to UV light and a very low response to visible light. Furthermore, the device reveals little change in spectral response with increasing temperature at all wavelengths.

Keywords

boron; diamond; photoconducting devices; photodetectors; plasma CVD; silicon; ultraviolet detectors; C; MPCVD; UV light detection; boron doping; microwave plasma chemical vapor deposition; photoconductor diamond film detector; silicon substrate; spectral response; visible light; Chemical vapor deposition; Detectors; Microwave devices; Photoconductivity; Plasma chemistry; Plasma devices; Plasma temperature; Semiconductor films; Silicon; Substrates; Diamond film fabrication; Photoconductor; UV sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, 2008. ECTI-CON 2008. 5th International Conference on

Conference_Location

Krabi

Print_ISBN

978-1-4244-2101-5

Electronic_ISBN

978-1-4244-2102-2

Type

conf

DOI

10.1109/ECTICON.2008.4600552

Filename

4600552