• DocumentCode
    2596375
  • Title

    Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits

  • Author

    Asbeck, P.M. ; Wang, K.C. ; Miller, Douglas L. ; Sullivan, G.J. ; Sheng, N.H. ; Sovero, E.A. ; Higgins, J.A.

  • Volume
    87
  • Issue
    1
  • fYear
    1987
  • fDate
    31929
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper reviews the present status of GaAIAs/ GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with fmax above 100 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain of 200 per stage. Breakdown voltages (BVCBO) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
  • Keywords
    Doping; Gallium arsenide; Heterojunction bipolar transistors; III-V semiconductor materials; Material storage; Microwave devices; Millimeter wave integrated circuits; Photonic band gap; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1987.1114503
  • Filename
    1114503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2596375