• DocumentCode
    2596420
  • Title

    44 GHz Monolithic Low Noise Amplifier

  • Author

    Berenz, J. ; Yen, H.C. ; Esfandiari, R. ; Nakano, K. ; Sato, Takao ; Velebir, J. ; Ip, K.

  • Volume
    87
  • Issue
    1
  • fYear
    1987
  • fDate
    31929
  • Firstpage
    15
  • Lastpage
    18
  • Abstract
    The design, fabrication, and performance of a single-stage 44 GHz monolithic HEMT low noise amplifier are described. The chip includes a single heterojunction HEMT with matching and biasing circuits. Greater than 5 dB gain was measured from 43.5 to 45.5 GHz and a noise figure of 5 dB with the associated gain of 5.5 dB was achieved at 44.5 GHz. The chip size is 1.25mm x 1.0mm.
  • Keywords
    Circuit noise; Fabrication; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; Microwave amplifiers; Microwave devices; Performance gain; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1987.1114506
  • Filename
    1114506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2596420