A Generalized Formulation of Augmented Drift-Diffusion Transport Suitable for Use in General Purpose Device Simulators

Author

Blakey, P.A. ; Wang, X.L. ; Maziar, C.M.

Author_Institution

Motorola

fYear

1990

fDate

3-4 Jun 1990

Firstpage

Lastpage

Keywords

Computational modeling; Degradation; Doping; Electron mobility; Equations; Microelectronics; Silicon; Steady-state; Temperature; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on

Type

DOI

10.1109/NUPAD.1990.748265

Filename

748265

Link To Document