DocumentCode
2597267
Title
Comparison of SAB methods for room temperature bonding of Si wafers
Author
Oshikawa, Keigo ; Wang, Chenxi ; Fujino, Masahisa ; Suga, Tadatomo ; Iguchi, Kenichi ; Nakawaza, Haruo ; Takahashi, Yoshikazu
Author_Institution
Univ. of Tokyo, Tokyo, Japan
fYear
2012
fDate
22-23 May 2012
Firstpage
113
Lastpage
113
Abstract
Three variations of SAB method are compared for Si-Si direct bonding at room temperature. The bonded interfaces are characterized by amorphous layers depending on the surface activation processes by ion beam or plasma irradiation.
Keywords
amorphous semiconductors; bonding processes; elemental semiconductors; silicon; surface treatment; SAB methods; Si-Si; amorphous layers; direct bonding; ion beam irradiation; plasma irradiation; room temperature bonding; surface activation processes; temperature 293 K to 298 K; Bonding; Iron; Plasma temperature; Silicon; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4673-0743-7
Type
conf
DOI
10.1109/LTB-3D.2012.6238066
Filename
6238066
Link To Document