• DocumentCode
    2597644
  • Title

    Investigation of Si/SiO2 bonding energy using recess test structure

  • Author

    Varpula, Aapo ; Dekker, James R. ; Suni, Tommi

  • Author_Institution
    Microsyst. & Nanoelectron, VTT (Tech. Res. Centre of Finland), Espoo, Finland
  • fYear
    2012
  • fDate
    22-23 May 2012
  • Firstpage
    193
  • Lastpage
    193
  • Abstract
    Recess test structures are utilized in the investigation of the bonding energy of the plasma activated uncoated and SiO2 coated silicon wafers. The scanning acoustic microscope images are compared with the values obtained from the crack opening measurements.
  • Keywords
    acoustic microscopes; silicon compounds; wafer bonding; Si-SiO2; bonding energy; crack opening measurements; plasma activated uncoated silicon wafers; recess test structure; scanning acoustic microscope; Acoustics; Annealing; Bonding; Plasma measurements; Plasmas; Silicon; Surface cracks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2012 3rd IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4673-0743-7
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2012.6238089
  • Filename
    6238089
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2597644