Design and implementation of channel mobility measurement modules

Author

Ouwerling, G.J.L. ; Staalenburg, J.C.

Author_Institution

Fac. of Electr. Eng., Delft Univ. of Technol., Netherlands

fYear

1989

fDate

13-14 March 1989

Firstpage

163

Lastpage

168

Abstract

Low-field majority carrier channel mobility profiles are determined by combining C-V and channel conductance measurements. The measurements can be used to determine majority carrier channel mobility profiles. The C-V data can also be used for the determination of doping profiles. The theory, the design of the test structures, and the measurement techniques are discussed. Experimental results are presented for a bipolar and a BiMOS process. In the BiMOS process, a deviation from existing mobility models was found.

Keywords

BIMOS integrated circuits; bipolar integrated circuits; capacitance measurement; carrier mobility; doping profiles; electric admittance measurement; integrated circuit testing; modules; BiMOS process; C-V characteristics; bipolar process; channel conductance; channel mobility measurement modules; doping profiles; majority carrier channel mobility profiles; test structures; Bipolar transistors; Capacitance; Electrical resistance measurement; Fabrication; Laboratories; Lattices; Measurement techniques; Shape measurement; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1989. ICMTS 1989. Proceedings of the 1989 International Conference on

Print_ISBN

0-87942-714-0

Type

conf

DOI

10.1109/ICMTS.1989.39303

Filename

39303