Accurate active device characterization for a 60GHz 65nm-CMOS Power Amplifier realization

Author

Aloui, Sofiane ; Kerherve, Eric ; Plana, Robert ; Belot, Didier

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2010

fDate

20-23 June 2010

Firstpage

209

Lastpage

212

Abstract

A fully integrated Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN). It is based on the 65nm CMOS technology from STMicro-electronics. The PA is matched without serial transmission lines (T-Lines) to reach good performances and low die area. S-parameters and load pull measurement results are demonstrated and compared with electromagnetic simulations for the power transistor. The PA is optimized to deliver the maximum saturated output power (P_sat) under class A biasing. The PA offers a P_sat of 8.2dBm, an Output Compression Point (OCP₁) of 5dBm and a gain of 5.7dB. The die area is 0.29mm² with pads.

Keywords

CMOS integrated circuits; personal area networks; power amplifiers; CMOS power amplifier; S-parameters; STMicroelectronics; active device characterization; class A biasing; electromagnetic simulation; frequency 60 GHz; fully integrated power amplifier; load pull measurement; maximum saturated output power; output compression point; power transistor; serial transmission lines; size 65 nm; wireless personal area network; CMOS integrated circuits; CMOS technology; Coplanar waveguides; Gain; Impedance; Power transistors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

NEWCAS Conference (NEWCAS), 2010 8th IEEE International

Conference_Location

Montreal, QC

Print_ISBN

978-1-4244-6806-5

Electronic_ISBN

978-1-4244-6804-1

Type

conf

DOI

10.1109/NEWCAS.2010.5603770

Filename

5603770