40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode

Author

Piels, Molly ; Bowers, John E.

Author_Institution

Univ. of California, Santa Barbara, Santa Barbara, CA, USA

Volume

32

Issue

20

fYear

2014

fDate

Oct.15, 2014

Firstpage

3502

Lastpage

3508

Abstract

We report a Si/Ge waveguide-coupled uni-traveling carrier (UTC) photodiode for high-power high-speed applications. Using the uni-traveling carrier structure rather than a PIN structure, capacitance and power handling are decoupled from responsivity and transit-time, enabling a detector with a 40 GHz bandwidth and a dilute absorption profile. This photodiode had a responsivity at 1550 nm of 0.5 A/W and a -1 dB compression current of 1.5 mA at 40 GHz. A longer device with the same cross-section had a 33 GHz bandwidth, responsivity of 0.7 A/W, and -1 dB compression current of 2.1 mA at 30 GHz.

Keywords

elemental semiconductors; germanium; high-speed optical techniques; microwave photonics; optical couplers; optical waveguides; photodetectors; photodiodes; silicon; Si-Ge; bandwidth 30 GHz; bandwidth 33 GHz; bandwidth 40 GHz; capacitance handling decoupling; compression current; current 1.5 mA; current 2.1 mA; dilute absorption profile; high-power high-speed applications; loss -1 dB; photodetector; power handling decoupling; silicon-germanium waveguide-coupled unitraveling carrier photodiode; wavelength 1550 nm; Absorption; Capacitance; Detectors; Germanium; Optical waveguides; Photodiodes; Silicon; Microwave photonics; photodetectors; silicon photonics; uni-traveling-carrier photodiode;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2014.2310780

Filename

6762882