DocumentCode
2600838
Title
Thermophysics of Reliability Screening
Author
Plumlee, H.R. ; Peterman, D.A.
Author_Institution
Texas Instruments Incorporated, Dallas, Texas
fYear
1967
fDate
Nov. 1967
Firstpage
108
Lastpage
113
Abstract
The thermal behavior of a transistor is very important to its reliability. However, this behavior is complicated by the nonuniformity of the operating temperature and its dependence on operating conditions. An understanding of this behavior is necessary to accurately interpret reliability data and to establish more effective reliability screening procedures. The measurement of thermal impedance or thermal operating stress of a transistor is also complicated by the junction temperature nonuniformity and dependence upon operating conditions. Great care must be taken in using electrical methods to measure thermal impedance since it is not easy to determine what the indicated value represents. Because of the interdependence of most parameters used for reliability measurements and testing, it appears necessary to use a multi-parameter analysis on reliability data to obtain effective screening. This analysis should determine not only maximum value limites of each parameer but also limits relative to the values of other parameters. Reliable operation would correspond to regions in multiparameter space which are not necessarily bounded by a specific value of each parameter.
Keywords
Electric variables measurement; Failure analysis; Impedance measurement; Instruments; Power dissipation; Temperature dependence; Temperature measurement; Testing; Thermal stresses; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1967. Sixth Annual
Conference_Location
Los Angeles, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1967.362401
Filename
4207764
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