• DocumentCode
    2601057
  • Title

    Degradation of Evaporated Aluminium Contacts on Silicon Planar Transistors

  • Author

    Oliver, C.B.

  • Author_Institution
    Associated Semiconductor Manufacturers Limited, Wembley Laboratories, Hirst Research Centre, Wembley, England.
  • fYear
    1967
  • fDate
    Nov. 1967
  • Firstpage
    209
  • Lastpage
    215
  • Abstract
    At current densities of about 3 × 106 A/cm2 evaporated aluminium contacts on silicon become degraded in 1 to 3 hours at about 250°C. At low magnifications the degraded contacts appear to have blackened, but further examination shows their surfaces to have become roughened, with the appearance of discrete regions of a silicon-rich phase in the aluminium. This degradation is accompanied by irreversible increases in the room temperature sheet resistance of the contacts.
  • Keywords
    Aluminum; Degradation; Electrical resistance measurement; Fingers; Rough surfaces; Silicon; Surface resistance; Surface roughness; Temperature distribution; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1967. Sixth Annual
  • Conference_Location
    Los Angeles, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1967.362414
  • Filename
    4207777