DocumentCode
2601057
Title
Degradation of Evaporated Aluminium Contacts on Silicon Planar Transistors
Author
Oliver, C.B.
Author_Institution
Associated Semiconductor Manufacturers Limited, Wembley Laboratories, Hirst Research Centre, Wembley, England.
fYear
1967
fDate
Nov. 1967
Firstpage
209
Lastpage
215
Abstract
At current densities of about 3 à 106 A/cm2 evaporated aluminium contacts on silicon become degraded in 1 to 3 hours at about 250°C. At low magnifications the degraded contacts appear to have blackened, but further examination shows their surfaces to have become roughened, with the appearance of discrete regions of a silicon-rich phase in the aluminium. This degradation is accompanied by irreversible increases in the room temperature sheet resistance of the contacts.
Keywords
Aluminum; Degradation; Electrical resistance measurement; Fingers; Rough surfaces; Silicon; Surface resistance; Surface roughness; Temperature distribution; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1967. Sixth Annual
Conference_Location
Los Angeles, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1967.362414
Filename
4207777
Link To Document