• DocumentCode
    2602349
  • Title

    Degradation and Passivation of GaP Light-Emitting Diodes

  • Author

    Hartman, R.L. ; Kuhn, M. ; Schwartz, B.

  • Author_Institution
    Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey 07974
  • fYear
    1971
  • fDate
    25993
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    Degradation of electroluminescence of GaP light-emitting diodes has been Significantly reduced by chemical passivation of the surfaces. Passivation was achieved by producing an amorphous native oxide over the exposed surfaces of completed diode structures. Degradation characteristics of passivated and unpassivated devices are discussed and qualitatively explained in terms of a simple model.
  • Keywords
    Amorphous materials; Annealing; Chemicals; Degradation; Electroluminescence; Light emitting diodes; Passivation; Surface cleaning; Surface treatment; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1971. 9th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1971.362486
  • Filename
    4207855
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2602349