DocumentCode
2602638
Title
Electromigration Damage in Al-Cu Thin Films
Author
Berenbaum, L. ; Rosenberg, R.
Author_Institution
IBM Components Division, East Fishkill Facility, Hopewell Junction, New York 12533
fYear
1971
fDate
25993
Firstpage
136
Lastpage
141
Abstract
Al-3% Cu stripes are powered in situ in the transmission electron microscope in order to study the effect of copper on the mechanisms of failure due to electro-migration. Consideration is given to the effects of various heat treatments and the depletion of Cu in the damage zone.
Keywords
Aluminum; Copper; Electromigration; Grain boundaries; Heat treatment; Silicon; Surface morphology; Testing; Transistors; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1971. 9th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1971.362506
Filename
4207875
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