Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

Author

Morikawa, T. ; Kurotsuchi, K. ; Kinoshita, M. ; Matsuzaki, N. ; Matsui, Y. ; Fuiisaki, Y. ; Hanzawa, S. ; Kotabe, A. ; Terao, M. ; Moriya, H. ; Iwasaki, T. ; Matsuoka, M. ; Nitta, F. ; Moniwa, M. ; Koga, T. ; Takaura, N.

Author_Institution

Hitachi Ltd., Tokyo

fYear

2007

fDate

10-12 Dec. 2007

Firstpage

307

Lastpage

310

Abstract

We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge₂Sb₂Tes, and we demonstrated 10-year retention at temperatures above 150degC, which is the highest temperature ever reported.

Keywords

chalcogenide glasses; germanium compounds; indium compounds; phase change materials; semiconductor storage; Ge₂Sb₂Te₅; chalcogenide features; data retention; denser texture; memory cell; phase change memory; stable operation; temperature 150 degC; thermal stability; Amorphous materials; Automotive engineering; Consumer products; Crystalline materials; Crystallization; Phase change materials; Phase change memory; Tellurium; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2007. IEDM 2007. IEEE International

Conference_Location

Washington, DC

Print_ISBN

978-1-4244-1507-6

Electronic_ISBN

978-1-4244-1508-3

Type

conf

DOI

10.1109/IEDM.2007.4418932

Filename

4418932