A Reliability Study of Insulated Gate Field Effect Transistors with an Al2O3-SiO2 Gate Structure

Author

Lampi, E.E. ; Labuda, E.F.

Author_Institution

Bell Telephone Laboratories, Inc., 555 Union Blvd., Allentown, Pennsylvania

fYear

1972

fDate

26390

Firstpage

112

Lastpage

119

Keywords

Aging; Annealing; Dielectrics and electrical insulation; Electron beams; FETs; Palladium; Platinum; Sputtering; Threshold voltage; Titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1972. 10th Annual

Conference_Location

Las Vegas, NV, USA

ISSN

0735-0791

Type

DOI

10.1109/IRPS.1972.362538

Filename

4207910

Link To Document