DocumentCode
2603201
Title
Degradation of MNOS Memory Transistor Characteristics and Failure Mechanism Model
Author
Woods, Murray H. ; Tuska, James W.
Author_Institution
RCA Laboratories, David Sarnoff Research Center, Princeton, New Jersey 08540
fYear
1972
fDate
26390
Firstpage
120
Lastpage
125
Abstract
The MNOS memory transistor has been observed to exhibit a negative shift of the threshold states and a loss of memory retention time after a large number of alternating polarity writing pulses. Oxide breakdown and the resulting creation of fast oxide surface states are correlated with the degradation of the memory performance of the device.
Keywords
Degradation; Electrons; FETs; Failure analysis; Insulation; MOS capacitors; MOSFETs; Space vector pulse width modulation; Threshold voltage; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1972. 10th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1972.362539
Filename
4207911
Link To Document