DocumentCode
2603837
Title
High power, highly reliable Al-free 940 nm diode lasers
Author
Erbert, G. ; Beister, G. ; Knauer, A. ; Sebastian, J. ; Hulsewede, R. ; Wenzel, H. ; Weyers, M. ; Trankle, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fYear
2000
fDate
25-28 Sept. 2000
Firstpage
21
Lastpage
22
Abstract
We have demonstrated the excellent performance of high power Al-free InGaAs QW diode lasers in the wavelength range around 940 nm making these devices very well suited for pumping, material processing and telecommunication applications.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser materials processing; laser reliability; laser stability; laser transitions; optical pumping; optical transmitters; quantum well lasers; 940 nm; Al-free 940 nm diode lasers; InGaAs; InGaAs QW diode lasers; high power; highly reliable; laser material processing; laser pumping; optical telecommunication applications; Coatings; Degradation; Diode lasers; Fiber lasers; Laser excitation; Laser stability; Power generation; Testing; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2000. Conference Digest. 2000 IEEE 17th International
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-6259-4
Type
conf
DOI
10.1109/ISLC.2000.882269
Filename
882269
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