DocumentCode
2605013
Title
Ion Instabilities in MOS Structures
Author
Kriegler, R.J.
Author_Institution
Bell-Northern Research, Ottawa, Canada
fYear
1974
fDate
27120
Firstpage
250
Lastpage
258
Abstract
Sodium and a few other alkali metal impurities, introduced during processing into the SiO2 gate insulator of MOS devices, are easily ionized and are sufficiently mobile even at low temperatures to cause a considerable drift of the electrical characteristics of MOS devices. This paper reviews methods of detecting the presence of mobile ions and discusses techniques for reducing the concentration of impurities or eliminating their deleterious electrical effect.
Keywords
Capacitance; Dielectrics and electrical insulation; Electric variables; FETs; Impurities; MOS devices; MOSFETs; Metal-insulator structures; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1974.362654
Filename
4208032
Link To Document