Reliability Studies of Gunn Diodes

Gallium Arsenide Gunn diodes have been investigated for long-term reliability prediction and verification of failure mechanisms. Data are presented concerning burn-out distribution in time, change in DC and RF parameters after DC high temperature burn-in, and step-stress testing. Alloying of the contact metalization into the active region above a critical temperature hampered interpretation of the step-stress results. Accordingly, constant stress testing was initiated. An improved thermal resistance measurement technique is presented for Gunn diodes. Results are verified using an IR radiometer.