DocumentCode
2605135
Title
Electron Injection and Trapping in Pyrolytic A12O3
Author
Powell, R.J.
Author_Institution
RCA Laboratories, Princeton, NJ 08540
fYear
1974
fDate
27120
Firstpage
298
Lastpage
298
Abstract
Pyrolytic aluminum oxide has emerged as an MIS gate insulator which has good interface properties on silicon and is superior to SiO2 in radiation hardness. Experience has proven that this material and the pyrolytic deposition method are compatible with silicon technology and, in particular Al2O3 has been used to fabricate radiation-hard MOS integrated circuits, including the complementary-symmetry MOS (COS/MOS) circuits.
Keywords
Aluminum oxide; Electron traps; Insulation; Integrated circuit reliability; Integrated circuit technology; Laboratories; MIS devices; MOS integrated circuits; Silicon on insulator technology; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1974. 12th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1974.362661
Filename
4208039
Link To Document