DocumentCode
2605637
Title
Real Vth instability of pMOSFETs under practical operation conditions
Author
Zhang, J.F. ; Ji, Zhen ; Chang, M.H. ; Kaczer, B. ; Groeseneken, G.
Author_Institution
Liverpool John Moores Univ., Liverpool
fYear
2007
fDate
10-12 Dec. 2007
Firstpage
817
Lastpage
820
Abstract
Lifetime of pMOSFETs is limited by negative bias temperature instability (NBTI). For the first time, we show that the NBTI-induced threshold voltage shift, DeltaVth, measured in early works by using either the ´on-the-fly´ or the conventional transfer characteristics extrapolation techniques is not the real DeltaVth under practical operation. A new method is proposed for estimating the real DeltaVth.
Keywords
MOSFET; electric potential; semiconductor device measurement; thermal stability; voltage measurement; NBTI-induced threshold voltage shift; negative bias temperature instability; pMOSFET instability; pMOSFET lifetime limitation; threshold voltage shift estimation method; Degradation; Electrical resistance measurement; Extrapolation; MOSFETs; Negative bias temperature instability; Niobium compounds; Stress measurement; Threshold voltage; Titanium compounds; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Conference_Location
Washington, DC
Print_ISBN
978-1-4244-1507-6
Electronic_ISBN
978-1-4244-1508-3
Type
conf
DOI
10.1109/IEDM.2007.4419073
Filename
4419073
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