DocumentCode
2606442
Title
Reliability Studies of Polysilicon Fusible Link PROM´s
Author
Smith, R.C. ; Rosenberg, S.J. ; Barrett, C.R.
Author_Institution
Intel Corporation, 3065 Bowers Avenue, Santa Clara, California 95051
fYear
1976
fDate
27851
Firstpage
193
Lastpage
197
Abstract
Reliability aspects of polycrystalline silicon fusible link PROM\´s have been investigated and discussed in terms of manufacturing and accelerated lifetesting. lifetest data indicate that the "grow back" failure made operative in nichrome fuse PROM\´s is not present in polysilicon fuses. Failure rates associated with the fuse structure are considerably below the inherent failure rate of the bipolar device.
Keywords
Acceleration; Electrons; Fuses; Manufacturing; PROM; Packaging; Paper technology; Shape; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1976. 14th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1976.362741
Filename
4208125
Link To Document