• DocumentCode
    2606619
  • Title

    Potentiality of Silicon Optical Modulator Based on Free-Carrier Absorption

  • Author

    Tabei, Tetsuo ; Hirata, Tomoki ; Kajikawa, Kenta ; Sunami, Hideo

  • Author_Institution
    Hiroshima Univ., Hiroshima
  • fYear
    2007
  • fDate
    10-12 Dec. 2007
  • Firstpage
    1023
  • Lastpage
    1026
  • Abstract
    Light propagation in metal-oxide-semiconductor (MOS) optical modulator based on free-carrier absorption is analyzed theoretically and compared with experimental results. The coincidence is sufficient enough to confirm validity of the simulation. However, practical use of the modulator is limited since extinction ratio is still small due to weak interaction between light and inversion carrier at around 1.55 mum light.
  • Keywords
    MIS devices; absorption; light propagation; optical modulation; free-carrier absorption; light propagation; metal-oxide-semiconductor optical modulator; silicon optical modulator; Absorption; Dielectric substrates; Electrons; Impurities; MOS capacitors; Neodymium; Optical modulation; Optical propagation; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2007. IEDM 2007. IEEE International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    978-1-4244-1507-6
  • Electronic_ISBN
    978-1-4244-1508-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2007.4419129
  • Filename
    4419129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2606619