• DocumentCode
    2607503
  • Title

    Very low voltage operational amplifiers using floating gate MOS transistor

  • Author

    Yu, Chong-Gun ; Geiger, Randall L.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Iowa State Univ., Ames, IA, USA
  • fYear
    1993
  • fDate
    3-6 May 1993
  • Firstpage
    1152
  • Abstract
    A threshold voltage tunable operational amplifier (op-amp) structure that can be operated with a very low power supply is presented. The use of floating gate MOS transistors as the basic op-amp circuit elements makes it possible to obtain a very low voltage op-amp because of the threshold voltage adjustability of the floating gate transistors. Good matching can also be achieved by tuning the threshold voltages. A two-step threshold voltage tuning scheme is presented. Due to the long term charge retention property of the floating gate transistors, threshold voltage tuning does not have to be done frequently, and near continuous-time operation of the op-amp can be achieved
  • Keywords
    MOS analogue integrated circuits; circuit tuning; operational amplifiers; charge retention property; floating gate MOS transistor; low power supply; near continuous-time operation; threshold voltage tunable; voltage adjustability; voltage tuning scheme; CMOS technology; Circuit optimization; Digital circuits; Low voltage; MOSFETs; Nonvolatile memory; Operational amplifiers; Power supplies; Threshold voltage; Tunable circuits and devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    0-7803-1281-3
  • Type

    conf

  • DOI
    10.1109/ISCAS.1993.393909
  • Filename
    393909