DocumentCode
2607544
Title
VMOS Reliability
Author
Edward, J.R. ; Fuller, E. ; Allman, G. ; Malwah, M.L.
Author_Institution
American Microsystems, Inc., 3800 Homestead Road, Santa Clara, California 9505. (408) 246-0330
fYear
1978
fDate
28581
Firstpage
23
Lastpage
27
Abstract
Whenever a new technology such as VMOS emerges, one key element to its success is the reliability of the products made in that technology. This paper presents the results of a reliability study that was performed to examine the fundamental VMOS device stability and high temperature operating life (HTOL) failure rates for VMOS products. The results, including a discussion of the failure mechanisms, are presented for more than 5 million device hours of HTOL and are used to predict reliability of products fabricated in the VMOS Technology.
Keywords
Circuits; Etching; MOS devices; P-n junctions; Resistors; Stability; Stress; Substrates; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1978. 16th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1978.362813
Filename
4208203
Link To Document