Monte Carlo simulations of sub-100 nm InGaAs MOSFETs for digital applications

We have studied the performance potential of 80 and 35 nm physical gate length MOSFETs with In_0.2Ga_0.8As channel using ensemble Monte Carlo (MC) device simulations. MC transport model includes self-consistent calculations of Fermi energy and electron temperature using Fermi-Dirac statistics, interface roughness scattering and quantum confinement corrections in order to attain a realistic prediction of device performance. The 80 nm InGaAs MOSFET with a realistic source/drain doping of 2 ×10¹⁹cm^-3 can deliver more than 60% increase in the drive current compared to the Si based MOSFETs with a similar channel length. The 80 nm InGaAs MOSFET with a large peak doping of 5 ×10¹⁹cm^-3 can outperform the strained Si MOSFET by more than 200%. However, the 35 nm InGaAs MOSFET cannot outperform significantly the equivalent strained Si MOSFETs even with the extremely high source/drain doping of 5 × 10¹⁹cm^-3.