Comprehensive ballistic saturation current study of strained germanium NMOSFETs

Author

Chang, S.T.

Author_Institution

Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung

fYear

2007

fDate

2-5 Aug. 2007

Firstpage

1144

Lastpage

1147

Abstract

The ballistic saturation drain current in strained germanium NMOSFET is assessed using an analytical model. The angular dependence of ballistic saturation drain current in Ge NMOSFET for all substrate orientation under different strain conditions is investigated. Applying biaxial tensile stress on (111) wafer with [-110] channel direction can reach the highest ballistic saturation drain current. For both tensile and compressive strain, ballistic saturation drain current enhancement can be found for all wafer orientation if strain condition and channel direction are optimized.

Keywords

MOSFET; ballistic transport; elemental semiconductors; germanium; semiconductor device models; Ge; biaxial tensile stress; comprehensive ballistic saturation current; strained germanium NMOSFETs; substrate orientation; wafer orientation; Capacitive sensors; Effective mass; Electrons; Energy states; Germanium; MOSFETs; Nanotechnology; Quantization; Tensile strain; Tensile stress; Ballistic saturation drain current; Ge NMOSFET; biaxial stress; uniaxial stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2007. IEEE-NANO 2007. 7th IEEE Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-0607-4

Electronic_ISBN

978-1-4244-0608-1

Type

conf

DOI

10.1109/NANO.2007.4601385

Filename

4601385