DocumentCode
2607945
Title
SOI CMOS technology for RF/MMIC applications - yes or no?
Author
Huang, Ru ; Liao, Huailin ; Zhang, Guoyan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
241
Lastpage
244
Abstract
SOI CMOS technology is now recognized as a promising candidate for low voltage RF circuits. This paper reviews (a) the RF and noise performance of SOI CMOS devices and future development tendency, (b) the performance of passive components on SOI substrates, (c) demonstrations of SOI CMOS technology capabilities for RF, microwave and millimeter wave circuits from 1 GHz to tens of GHz, (d) substrate coupling for integrating delicate RF front-end circuits with noisy large scale digital circuits on SOI substrate. SOI CMOS technology shows advantages in active devices, passive components, RF circuits and full integration potential. The main obstacles for its extensive commercialization are the fabrication cost, market requirement and thus model support.
Keywords
CMOS integrated circuits; MMIC; integrated circuit noise; millimetre wave integrated circuits; silicon-on-insulator; MMIC applications; RF front-end circuits; SOI CMOS devices; SOI substrates; large scale digital circuits; low voltage RF circuits; microwave circuits; millimeter wave circuits; noise performance; passive components; substrate coupling; CMOS digital integrated circuits; CMOS technology; Circuit noise; Low voltage; MMICs; Microwave circuits; Microwave devices; Microwave technology; Millimeter wave technology; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546630
Filename
1546630
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