μtrench phase-change memory cell engineering and optimization

Author

Pirovano, A. ; Pellizzer, F. ; Redaelli, A. ; Tortorelli, I. ; Varesi, E. ; Ottogalli, F. ; Tosi, M. ; Besana, P. ; Cecchini, R. ; Piva, R. ; Magistretti, M. ; Scaravaggi, M. ; Mazzone, G. ; Petruzza, P. ; Bedeschi, F. ; Marangon, T. ; Modelli, A. ; Ielmi

Author_Institution

STMicroelectronics, Agrate Brianza, Italy

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

313

Lastpage

316

Abstract

Phase-change memory (PCM) cell is the most promising technology as post-flash nonvolatile memory (NVM). Among the different proposed cell structures, μtrench allows to simultaneously achieve low programming currents, small cell size, easy tunability and good dimensional control. Aim of this paper is to investigate the optimization and fine tuning capability of this cell architecture. Based on theoretical analysis and experimental results, the dependence of the PCM electrical parameters on the cell structure and on the geometric dimensions is assessed. An optimized μtrench cell with a programming current of 450 μA at 1.5 V and a set resistance of 5 kΩ is finally presented.

Keywords

circuit tuning; flash memories; memory architecture; optimisation; random-access storage; 1.5 V; 450 muA; 5 kohm; electrical parameters; fine tuning capability; flash memory; nonvolatile memory; optimized μtrench cell; phase-change memory cell; Degradation; Doping; Electric resistance; Nitrogen; Nonvolatile memory; Phase change materials; Phase change memory; Research and development; Size control; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546648

Filename

1546648