DocumentCode
2608682
Title
Electromigration of Sputtered Al-Si Alloy Films
Author
Nagasawa, Eiji ; Okabayashi, Hidekazu ; Nozaki, Tadatoshi ; Nikawa, Kiyoshi
Author_Institution
Nippon Electric Co., Ltd., 1-1, Miyazaki, Yonchome Takatsu-Ku, Kawasaki-Shi Kanagawa-Ken, 213, JAPAN
fYear
1979
fDate
28946
Firstpage
64
Lastpage
71
Abstract
Electromigration experiments were conducted on sputtered Al-Si alloy films of different metallographical properties, particularly, various grain sizes. The observed failure mode and median time to failure were found to be strongly dependent on grain size and its homogeneity in the films. Results were obtained on temperature dependence of median time to failure and of the failure mode in fine grained films. These failure mode differences were found to be related to void growth directions in conductor stripe, which were dependent on test conditions.
Keywords
Cobalt alloys; Conductive films; Conductors; Current density; Electromigration; Grain size; Semiconductor films; Temperature dependence; Testing; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1979. 17th Annual
Conference_Location
San Diego, CA, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1979.362872
Filename
4208265
Link To Document