• DocumentCode
    2609252
  • Title

    The impact of channel engineering on the performance and reliability of LDMOS transistors

  • Author

    Mohapatra, Nihar R. ; Ehwald, K.E. ; Barth, R. ; Rücker, H. ; Bolze, D. ; Schley, P. ; Schmidt, D. ; Wulf, H.-E.

  • Author_Institution
    IHP, Frankfurt, Germany
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    481
  • Lastpage
    484
  • Abstract
    In this paper, we study the performance and reliability of LDMOS (laterally diffused MOS) transistors, developed in a 0.25μm SiGe:C BiCMOS technology, for two different channel doping schemes a) uniform and b) single-sided halo (SH). We show that SH LDMOS transistors are more reliable and offer better DC and high frequency performance. We also demonstrate BVDS *Ft values up to 630GHzV with SH LDMOS transistors.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MOSFET; carbon; semiconductor device reliability; semiconductor doping; 0.25 micron; BiCMOS technology; SiGe:C; channel doping schemes; channel engineering; laterally diffused MOS transistors; reliability; single-sided halo doping; uniform doping; BiCMOS integrated circuits; Doping profiles; High power amplifiers; Hot carrier injection; Implants; MOSFETs; Radio frequency; Reliability engineering; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
  • Print_ISBN
    0-7803-9203-5
  • Type

    conf

  • DOI
    10.1109/ESSDER.2005.1546689
  • Filename
    1546689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2609252