• DocumentCode
    2609288
  • Title

    Increase of output power from IGBTs in high power high frequency resonant load inverters

  • Author

    Kleveland, Frode ; Undeland, Tore M. ; Langelid, John K.

  • Author_Institution
    Fac. of Electr. Eng. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
  • Volume
    5
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    2909
  • Abstract
    The primary goal of this work is to replace MOSFETs with IGBTs in high frequency (~300 kHz) high power (0.1-1 MW) inverters with series resonant load, a topology commonly used for induction heating. In this application, the IGBT losses are totally dominated by turn-off losses, and the turn-off losses decay less than linearly with the current. This is an invitation to develop a new control strategy which makes the necessary derating of the IGBTs less severe. For the conditions in this work, the new strategy can give 3 times more output power compared to a simple current reduction destressing for the same number of paralleled IGBTs
  • Keywords
    insulated gate bipolar transistors; invertors; losses; resonant power convertors; 0.1 to 1 MW; 300 kHz; IGBT; IGBT losses; current reduction destressing; high power high frequency resonant load inverters; induction heating; output power; output power increase; series resonant load; turn-off losses; Costs; Diodes; Insulated gate bipolar transistors; Inverters; MOSFETs; Power generation; Resonance; Resonant frequency; Switching frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
  • Conference_Location
    Rome
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-6401-5
  • Type

    conf

  • DOI
    10.1109/IAS.2000.882579
  • Filename
    882579