• DocumentCode
    2609356
  • Title

    Humidity Effects on Reverse Bias Testing of Ta Film Capacitors

  • Author

    Adolt, A.R. ; Melroy, D.O.

  • Author_Institution
    Bell Telephone Laboratories, Incorporated, 555 Union Boulevard, Allentown, Pennsylvania 18103, (215) 439-7504/7162
  • fYear
    1980
  • fDate
    29312
  • Firstpage
    39
  • Lastpage
    43
  • Abstract
    Reverse bias testing of Ta thin film capacitors under accelerated conditions showed higher failure rates at 45 and 65°C than at 85°C. TWo distinct failure modes occurred: area dependent point failures and non-area dependent failures along the counterelectrode/dielectric edge. The work reported here shows that the edge failures are moisture dent, while the point failures are not. The product limit method of statistical analysis was used to separate the two failure modes. The edge breakdowns occur only in the presence of moisture and the rate at which they occur is a function of the humidity level present. Low voltage leakage current studies indicate that there is a threshold bias value below which there is no observable moisture effect.
  • Keywords
    Capacitors; Dielectric thin films; Electric breakdown; Humidity; Leakage current; Life estimation; Low voltage; Moisture; Statistical analysis; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1980. 18th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1980.362909
  • Filename
    4208305