Simulation and characterization of high-frequency performances of advanced MIM capacitors

Author

Piquet, J. ; Cueto, O. ; Charlet, F. ; Thomas, M. ; Bermond, C. ; Farcy, A. ; Torres, J. ; Flechet, B.

Author_Institution

LAHC, Univ. de Savoie, Le Bourget du lac, France

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

497

Lastpage

500

Abstract

High-frequency simulations and characterizations of advanced metal-insulator-metal (MIM) capacitors with ultra thin 32 nm PECVD Si₃N₄ dielectric are presented. The frequency dependent behavior of capacitors is numerically and experimentally extracted over a wide frequency bandwidth. Numerical results are validated by comparison to experimental results. An equivalent circuit model of capacitors including four parameters is developed for a better understanding of the frequency dependent behavior. We focused on the impact of design on the performances of MIM capacitors realized on Si substrates.

Keywords

MIM devices; copper; dielectric materials; dielectric thin films; equivalent circuits; plasma CVD coatings; silicon compounds; substrates; thin film capacitors; 32 nm; MIM capacitors; PECVD dielectric; Si₃N₄; equivalent circuit model; ultra thin dielectrics; Capacitance; Copper; Electrodes; Frequency dependence; Integrated circuit interconnections; MIM capacitors; Performance evaluation; Predictive models; Radio frequency; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546693

Filename

1546693