• DocumentCode
    2609383
  • Title

    Degradation Model for Device Reliability

  • Author

    Yu, Chen Cheng

  • Author_Institution
    International Business Machines Corporation, F91/052, P.O. Box 390, Poughkeepsie, N. Y. 12602
  • fYear
    1980
  • fDate
    29312
  • Firstpage
    52
  • Lastpage
    54
  • Abstract
    The model assumes that, under a constant or cyclic stress, device degradation rate is proportional to the existing degradation. The proportionality constant is a positively distributed random variable. The distribution of the amount of degradation tends to be asymptotically lognormal. The general form of the life distribution is derived. Application of this model has been made in analyzing degradation data in thermal resistance, diode leakage, and transistor gain.
  • Keywords
    Assembly; Condition monitoring; Fatigue; Life testing; Pollution measurement; Random variables; Schottky diodes; Stress; Thermal degradation; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1980. 18th Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1980.362911
  • Filename
    4208307