DocumentCode
2609383
Title
Degradation Model for Device Reliability
Author
Yu, Chen Cheng
Author_Institution
International Business Machines Corporation, F91/052, P.O. Box 390, Poughkeepsie, N. Y. 12602
fYear
1980
fDate
29312
Firstpage
52
Lastpage
54
Abstract
The model assumes that, under a constant or cyclic stress, device degradation rate is proportional to the existing degradation. The proportionality constant is a positively distributed random variable. The distribution of the amount of degradation tends to be asymptotically lognormal. The general form of the life distribution is derived. Application of this model has been made in analyzing degradation data in thermal resistance, diode leakage, and transistor gain.
Keywords
Assembly; Condition monitoring; Fatigue; Life testing; Pollution measurement; Random variables; Schottky diodes; Stress; Thermal degradation; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1980. 18th Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1980.362911
Filename
4208307
Link To Document