Advanced ring type contact technology for high density phase change memory

Author

Song, Y.J. ; Park, Jae-Hyun ; Lee, S.Y. ; Jae-Hyun Park ; Hwang, Y.N. ; Lee, S.-H. ; Ryoo, K.C. ; Ahn, S.J. ; Jeong, C.W. ; Shin, J.M. ; Jeong, W.C. ; Koh, K.H. ; Jeong, G.T. ; Jeong, H.S. ; Kim, K.N.

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

513

Lastpage

516

Abstract

Advanced bottom electrode contact (BEC) scheme was successfully developed for fabricating reliable high density 64 Mb PRAM by using ring type contact scheme. This advanced ring type BEC scheme was prepared by depositing very thin TiN films inside a contact hole, and then core dielectrics was uniformly filled into the TiN-deposited contact hole. Using this novel contact scheme, it was possible to reduce a reset current with low set resistance, and also maintain a uniform cell distribution. Thus, it is clearly demonstrated that the ring type BEC technology can exhibit strong feasibility of high density 256 Mb PRAM and beyond.

Keywords

random-access storage; semiconductor storage; tin compounds; 256 MByte; 64 MByte; PRAM; TiN; bottom electrode contact scheme; contact hole; core dielectrics; high density phase change memory; ring type contact technology; thin films; Amorphous materials; Contact resistance; Crystallization; Dielectric thin films; Electrodes; Nonvolatile memory; Phase change memory; Phase change random access memory; Scalability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546697

Filename

1546697