DocumentCode
2609624
Title
AlSiC composite materials in IGBT power modules
Author
Mitic, G. ; Degischer, H.P. ; Lefranc, G. ; Licht, T.
Author_Institution
Corp. Technol. Dept., Siemens AG, Munich, Germany
Volume
5
fYear
2000
fDate
2000
Firstpage
3021
Abstract
The reliability of IGBT modules is limited by thermal fatigue of soft solder layers due to different coefficients of thermal expansion. A thermally matching conducting material can be produced from Al matrix composites containing high volume fractions of SiC particulates. Variously processed prototypes of AlSiC baseplates were investigated with a view to their suitability for IGBT power modules. The volume fraction of SiC particulates as well as their thermal conductivity, heat capacity, thermal expansion and mechanical properties were determined. The thermal conductivity of AlSiC increases with the SiC content to reach more than 200 W/mK, which exceeds that of the matrix alloy of about 180 W/mK. The remarkable plastic elongation of the material during initial heating indicates that it originally contained internal stresses which relax during heating by the plastification of the matrix. The mechanical and physical properties of the tested AlSiC materials are appropriate for applications in high-power IGBT modules. Annealing treatment is recommended for AlSiC to reduce the internal stresses
Keywords
aluminium compounds; composite materials; insulated gate bipolar transistors; modules; power bipolar transistors; semiconductor device reliability; silicon compounds; thermal analysis; thermal conductivity; AlSiC; AlSiC composite materials; IGBT power modules; SiC particulates; annealing treatment; heat capacity; internal stresses; mechanical properties; physical properties; plastic elongation; plastification; reliability; soft solder layers; thermal conductivity; thermal expansion coefficients; thermal fatigue; thermally matching conducting material; volume fraction; Composite materials; Conducting materials; Heating; Insulated gate bipolar transistors; Internal stresses; Mechanical factors; Multichip modules; Silicon carbide; Thermal conductivity; Thermal expansion;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location
Rome
ISSN
0197-2618
Print_ISBN
0-7803-6401-5
Type
conf
DOI
10.1109/IAS.2000.882596
Filename
882596
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