High voltage, monolithically interconnected GaAs thin film solar submodules

Author

McClelland, R. ; Dingle, B. ; Gale, R. ; Fan, J.C.

Author_Institution

Kopin Corp., Taunton, MA, USA

fYear

1990

fDate

21-25 May 1990

Firstpage

168

Abstract

The successful monolithic interconnection of four thin-film single-crystal GaAs cells, demonstrating one of the key advantages of thin-film cells made by the cleavage of lateral epitaxy for transfer (CLEFT) process, is reported. Monolithically series-interconnected 16 cm ² thin-film four-cell strings exhibiting a V_oc of 4.04 V and a total-area submodule efficiency of 21.0% under AM 1.5 global illumination at 26°C was successfully fabricated. An eight-cell string which had a V_oc of 7.96 V, an AM 1.5 efficiency of 21.2%, and a total submodule area of 2 cm² was produced. Details of the cell fabrication process and the cell performance are presented

Keywords

III-V semiconductors; gallium arsenide; solar cells; 21 percent; 21.2 percent; 4.04 V; 7.96 V; AM 1.5 global illumination; CLEFT process; GaAs thin film solar cells; cell fabrication process; cell performance; cleavage of lateral epitaxy for transfer; monolithic interconnection; semiconductors; submodules; Costs; Crystalline materials; Fabrication; Gallium arsenide; Lighting; Metallization; Photovoltaic cells; Substrates; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111612

Filename

111612